Advantages of Charge Plasma Based Double Gate Junction-less MOSFET over Bulk MOSFET for Label Free Biosensing

EasyChair Preprint no. 2017

Abstract

An assessment of charge plasma (CP) based biosensing between junction less (JL) and conventional devices for label-free electrical identification of analytes, especially DNA, has been examined here in detail. The impact of variations of charge analytes immobilized inside the nanogap cavity over the drain current, energy band profile, electron concentration, and sensitivity evaluated in dry atmospheric conditions. Here, the shifts into threshold potential for both JL-MOSFET and conventional-MOSFET based biosensor architecture have been utilized, like the sensing factor, to identify the existence of analytes while they immobilized inside the nanogap cavity in the channel section. The design of the recommended model with the complete numerical analysis has been executed utilizing the ATLAS device simulation software.

Keyphrases: Biosensor, effect transistor (MOSFET), Electron concentration, Flat band voltage, Junctionless metal oxide semiconductor field, sensitivity, threshold voltage, work function

@Booklet{EasyChair:2017,
  author = {Amit Bhattacharyya and Adrija Mukherjee and Manash Chanda and Debashis De},
  title = {Advantages of Charge Plasma Based Double Gate Junction-less MOSFET over Bulk MOSFET for Label Free Biosensing},
  howpublished = {EasyChair Preprint no. 2017},

  year = {EasyChair, 2019}}