A Ka-band 2-Stage Transformer Coupled Power Amplifier in 0.13µm SiGe BiCMOS Technology

EasyChair Preprint no. 5951

Abstract

This paper presents a 30-to-40 GHz 2-stage power amplifier (PA) for 5G applications. Transformers are used to achieve a broad input, output and interstage matching while occupying a compact size. The neutralization technique is used to boost the power gain and improve stabilities of PA. According to the simulation results, the power amplifier achieves an output 1dB compression point (OP_1dB) of 14.9 dBm and a saturated output power of 17.4 dBm with a peak PAE of 39% at 35 GHz. The gain is larger than 30 dB from 30-40 GHz. Implemented in 0.13 µm SiGe BiCMOS process, the overall chip size is 0.46 mm² including all RF and DC pads.

Keyphrases: Amplifier (PA), Ka-band power, Neutralization, SiGe BiCMOS, transformer

@Booklet{EasyChair:5951,
  author = {Ling Li and Kenan Xie and Tongxuan Zhou and Haitang Dong and Hao Zhang and Keping Wang},
  title = {A Ka-band 2-Stage Transformer Coupled Power Amplifier in 0.13µm SiGe BiCMOS Technology},
  howpublished = {EasyChair Preprint no. 5951},

  year = {EasyChair, 2021}}